High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells.
نویسندگان
چکیده
A solar cell based on the n-MoS2/i-SiO2/p-Si heterojunction is fabricated. The device exhibits a high power-conversion efficiency of 4.5% due to the incorporation of a nano-scale SiO2 buffer into the MoS2/Si interface. The present device architectures are envisaged as potentially valuable candidates for high-performance photovoltaic devices.
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عنوان ژورنال:
- Nanoscale
دوره 7 18 شماره
صفحات -
تاریخ انتشار 2015